STMicroelectronics Mass Produces PowerGaN, Coming Soon to Automotive Devices
STMicroelectronics has announced that it has begun volume production of enhancement-mode PowerGaN HEMT (High Electron Mobility Transistor) devices that simplify the design of high-efficiency power conversion systems, with the first two products, the SGT120R65AL and the SGT65R65AL, available now in the PowerFLAT 5x6 HV package. In the coming months, ST will also introduce new PowerGaN products, i.e. automotive-grade devices, as well as additional power package formats, including the PowerFLAT 8x8 DSC and LFPAK 12x12 high-power packages. (Interface)
意法半导体官微宣布，已开始量产能够简化高效功率转换系统设计的增强模式PowerGaN HEMT（高电子迁移率晶体管）器件，先期推出的两款产品SGT120R65AL和SGT65R65AL现已上市，采用PowerFLAT 5x6 HV封装。在接下来的几个月里，意法半导体还将推出新款PowerGaN产品，即车规器件，以及更多的功率封装形式，包括PowerFLAT 8x8 DSC和LFPAK 12x12大功率封装。（界面）
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